High Temperature 32MB SPI Serial Flash Memory Module

Part Number 32MB08SF-03

Advance Information 02/2012

CMOS   3.3 Volt-only      工作温度( -55度~+175度)

 

Characteristics

Ø  2.7 – 3.6 volt for read and program operations

Ø  SPI Bus Compatible Serial Interface

Ø  Flexible Erase Options – Page, Block, Sector, Chip

Ø  Embedded Erase Algorithms

Ø  Embedded Program Algorithms

Ø  66 MHZ clock rate (Maximum)

Ø  Write Protect pin works with status register to protect portions of memory  

Ø  Low Power Consumption

Ø  Power saving standby mode

Ø  RESET pin pauses serial communication without deselecting device

Ø  Designed for High Temperature Applications

Ø  Nominal Package Dimensions:

2.250” L x 0.600” W x 0.225” H – 0.500” DIP Row Spacing – 0.100” PIN to PIN Spacing

Pin Description

1	NC	36	VCC (3.0 VOLTS)
2	A_H0	35	VCC (3.0 VOLTS)
3	NC	34	#WP
4	A_H1	33	GND
5	NC	32	#RESET
6	A_H2	31	GND
7	NC	30	CLK
8	NC	29	GND
9	NC	28	DATA_IN
10	NC	27	GND
11	NC	26	DATA_OUT
12	NC	25	GND
13	CE_L	24	NC
14	NC	23	GND
15	GND	22	NC
16	GND	21	GND
17	NC	20	NC
18	NC	19	NC

 

 Table 1 Signal Description

VCC	Power Supply - + 3 V DC
A_H[2..0]	Address Bus
#RESET	Reset Input – Active Low
#WP	Write Protect Input – Active Low
CLK	Serial Clock Input
DATA_IN	Serial Data Input
DATA_OUT	Serial Data Output
GND	Ground

 

General Description

The Advance Information status indicates that this document contains information on one or more products under development. Do not design in this product without contacting HDA-SMC.

HDA-SMC reserves the right to change or discontinue work on this product without notice.

 

The Flash Memory Module 32MB08SF contains 8 Serial Flash Memory ICs. The address bus pins are provided to activate individual chip enable inputs on each IC.. Each flash memory device can be read in a random access manner. Writes, however, are done on a byte-by-byte basis and strict write procedures need to be followed. Before writing to a location in memory, that memory must first be erased.  This can be done on a sector basis, or it can be done on a chip wide basis. It is possible to program the individual memory chips to enter erase cycles at the same time.  Care should be taken that the thermal limits of the device are not exceeded and that the power supply can provide the necessary current.  It is recommended that the chips be individually erased.  It is also possible to have more than one chip in a write mode at the same time. Care should be taken when causing more than one chip to be in the write state.

   

 

32MB08SF-03  Through Hole 36 Pin DIP Package

 

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